| 1 |
Different growth mechanisms of Ge by Stranski-Krastanow on Si (111) and (001) surfaces: An STM study
Teys SA
Applied Surface Science, 392, 1017, 2017 |
| 2 |
Structure of initial Ge nanoclusters at the edges of Si(111) steps with the front in the <-1-1 2 > direction
Teys SA, Romanyuk KN, Olshanetsky BZ
Journal of Crystal Growth, 404, 39, 2014 |
| 3 |
Ge and GexSi1-x islands formation on GexSi1-x solid solution surface
Nikiforov AI, Timofeev VA, Teys SA, Gutakovsky AK, Pchelyakov OP
Thin Solid Films, 520(8), 3319, 2012 |
| 4 |
Molecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiation
Smagina ZV, Novikov PL, Zinovyev VA, Armbrister VA, Teys SA, Dvurechenskii AV
Journal of Crystal Growth, 323(1), 244, 2011 |
| 5 |
Formation of Ge nanoislands before the completion of a wetting layer in the Ge/Si(111) system
Teys SA, Talochkin AB, Olshanetsky BZ
Journal of Crystal Growth, 311(15), 3898, 2009 |
| 6 |
The influence of elastic strains on the growth and properties of vertically ordered Ge "hut"-clusters
Nikiforov AI, Ulyanov VV, Teys SA, Gutakovsky AK, Pchelyakov OP
Thin Solid Films, 517(1), 69, 2008 |
