화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control
Creighton JR, Breiland WG, Koleske DD, Thaler G, Crawford MH
Journal of Crystal Growth, 310(6), 1062, 2008
2 InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition
Pinnington T, Koleske DD, Zahler JM, Ladous C, Park YB, Crawford MH, Banas M, Thaler G, Russell MJ, Olson SM, Atwater HA
Journal of Crystal Growth, 310(10), 2514, 2008
3 Lithographically defined carbon growth templates for ELOG of GaN
Burckel DB, Fan HY, Thaler G, Koleske DD
Journal of Crystal Growth, 310(12), 3113, 2008
4 Effect of oxygen co-doping on the electronic and magnetic properties of Ga(1-x)MnxN
Thaler G, Frazier R, Gila B, Stapleton J, Davies R, Abernathy CR, Pearton SJ
Electrochemical and Solid State Letters, 8(1), G20, 2005
5 Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers
Buyanova IA, Bergman JP, Chen WM, Thaler G, Frazier R, Abernathy CR, Pearton SJ, Kim J, Ren F, Kyrychenko FV, Stanton CJ, Pan CC, Chen GT, Chyi J, Zavada JM
Journal of Vacuum Science & Technology B, 22(6), 2668, 2004
6 Characterization of high dose Mn, Fe, and Ni implantation into p-GaN
Pearton SJ, Overberg ME, Thaler G, Abernathy CR, Theodoropoulou N, Hebard AF, Chu SNG, Wilson RG, Zavada JM, Polyakov AY, Osinsky AV, Norris PE, Chow PP, Wowchack AM, Van Hove JM, Park YD
Journal of Vacuum Science & Technology A, 20(3), 721, 2002