화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Static and low frequency noise characterization of ultra-thin body InAs MOSFETs
Karatsori TA, Pastorek M, Theodorou CG, Fadjie A, Wichmann N, Desplanque L, Wallart X, Bollaert S, Dimitriadis CA, Ghibaudo G
Solid-State Electronics, 143, 56, 2018
2 Drain current local variability from linear to saturation region in 28 nm bulk NMOSFETs
Karatsori TA, Theodorou CG, Haendler S, Dimitriadis CA, Ghibaudo G
Solid-State Electronics, 128, 31, 2017
3 Low frequency noise variability in ultra scaled FD-SOI n-MOSFETs: Dependence on gate bias, frequency and temperature
Theodorou CG, Ioannidis EG, Haendler S, Josse E, Dimitriadis CA, Ghibaudo G
Solid-State Electronics, 117, 88, 2016
4 Dynamic variability in 14 nm FD-SOI MOSFETs and transient simulation methodology
Theodorou CG, Ioannidis EG, Haendler S, Dimitriadis CA, Ghibaudo G
Solid-State Electronics, 111, 100, 2015
5 Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction
Karatsori TA, Theodorou CG, Ioannidis EG, Haendler S, Josse E, Dimitriadis CA, Ghibaudo G
Solid-State Electronics, 111, 123, 2015
6 Evolution of low frequency noise and noise variability through CMOS bulk technology nodes from 0.5 mu m down to 20 nm
Ioannidis EG, Haendler S, Theodorou CG, Lasserre S, Dimitriadis CA, Ghibaudo G
Solid-State Electronics, 95, 28, 2014
7 Origin of the low-frequency noise in n-channel FinFETs
Theodorou CG, Fasarakis N, Hoffman T, Chiarella T, Ghibaudo G, Dimitriadis CA
Solid-State Electronics, 82, 21, 2013
8 Symmetrical unified compact model of short-channel double-gate MOSFETs
Papathanasiou K, Theodorou CG, Tsormpatzoglou A, Tassis DH, Dimitriadis CA, Bucher M, Ghibaudo G
Solid-State Electronics, 69, 55, 2012