검색결과 : 30건
| No. | Article |
|---|---|
| 1 |
Characterization and modelling of layout effects in SiGe channel pMOSFETs from 14 nm UTBB FDSOI technology Berthelon R, Andrieu F, Ortolland S, Nicolas R, Poiroux T, Baylac E, Dutartre D, Josse E, Claverie A, Haond M Solid-State Electronics, 128, 72, 2017 |
| 2 |
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells Zerveas G, Caruso E, Baccarani G, Czornomaz L, Daix N, Esseni D, Gnani E, Gnudi A, Grassi R, Luisier M, Markussen T, Osgnach P, Palestri P, Schenk A, Selmi L, Sousa M, Stokbro K, Visciarelli M Solid-State Electronics, 115, 92, 2016 |
| 3 |
Electron mobility in ultra-thin InGaAs channels: Impact of surface orientation and different gate oxide materials Krivec S, Poljak M, Suligoj T Solid-State Electronics, 115, 109, 2016 |
| 4 |
A review of special gate coupling effects in long-channel SOI MOSFETs with lightly doped ultra-thin bodies and their compact analytical modeling Rudenko T, Nazarov A, Kilchytska V, Flandre D Solid-State Electronics, 117, 66, 2016 |
| 5 |
UTBB FDSOI: Evolution and opportunities Monfray S, Skotnicki T Solid-State Electronics, 125, 63, 2016 |
| 6 |
FinFET and UTBB for RF SOI communication systems Raskin JP Solid-State Electronics, 125, 73, 2016 |
| 7 |
Application, modeling and limitations of Y-function based methods for massive series resistance in nanoscale SOI MOSFETs Karsenty A, Chelly A Solid-State Electronics, 92, 12, 2014 |
| 8 |
Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit Arshad MKM, Kilchytska V, Emam M, Andrieu F, Flandre D, Raskin JP Solid-State Electronics, 97, 38, 2014 |
| 9 |
2D physics-based closed-form modeling of dopant-segregated Schottky barrier UTB MOSFETs Schwarz M, Kloes A Solid-State Electronics, 99, 65, 2014 |
| 10 |
Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization Ding YJ, Cheng R, Zhou Q, Du AY, Daval N, Nguyen BY, Yeo YC Solid-State Electronics, 83, 37, 2013 |