| 1 |
Effect of pretreatment on Al2O3 substrate by depositing Al2O3 film on the properties of Ni-Cr-Si based thin film resistor
Chung KC, Lee WH
Materials Chemistry and Physics, 234, 311, 2019 |
| 2 |
Reliability and characteristics of magnetron sputter deposited tantalum nitride for thin film resistors
Lee DW, Kim YN, Cho MY, Ko PJ, Lee D, Koo SM, Moon KS, Oh JM
Thin Solid Films, 660, 688, 2018 |
| 3 |
Stable temperature coefficient of resistance in TiSiON thin film resistors deposited by magnetron co-sputtering
Mireles M, Lopez MAQ
Current Applied Physics, 16(11), 1484, 2016 |
| 4 |
Structural and electrical properties of CuAlMo thin films prepared by magnetron sputtering
Birkett M, Penlington R, Wan CY, Zoppi G
Thin Solid Films, 540, 235, 2013 |
| 5 |
Combined TiN- and TaN temperature compensated thin film resistors
Malmros A, Andersson K, Rorsman N
Thin Solid Films, 520(6), 2162, 2012 |
| 6 |
Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InPHEMT MMIC technology
Malmkvist M, Mellberg A, Rorsman N, Zirath H, Grahn J
Solid-State Electronics, 50(5), 858, 2006 |
| 7 |
Ni-Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits
Vinayak S, Vyas HP, Muraleedharan K, Vankar V
Thin Solid Films, 514(1-2), 52, 2006 |
| 8 |
Effects of underlying dielectric on boron implanted polysilicon in presence of fluorine
Gupta S
Solid-State Electronics, 47(2), 307, 2003 |
| 9 |
Low temperature microcrystalline silicon thin film resistors on glass substrates
Krishnan AT, Bae S, Fonash SJ
Solid-State Electronics, 44(7), 1163, 2000 |
