검색결과 : 18건
| No. | Article |
|---|---|
| 1 |
Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy Beaudoin M, Lewis RB, Andrews JJ, Bahrami-Yekta V, Masnadi-Shirazi M, O'Leary SK, Tiedje T Journal of Crystal Growth, 425, 245, 2015 |
| 2 |
Surface reconstructions during growth of GaAs1-xBix alloys by molecular beam epitaxy Masnadi-Shirazi M, Beaton DA, Lewis RB, Lu XF, Tiedje T Journal of Crystal Growth, 338(1), 80, 2012 |
| 3 |
Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy Beaudoin M, Chan ICW, Beaton D, Elouneg-Jamroz M, Tiedje T, Whitwick M, Young EC, Young JF, Zangenberg N Journal of Crystal Growth, 311(7), 1662, 2009 |
| 4 |
GaAs1-xBix light emitting diodes Lewis RB, Beaton DA, Lu XF, Tiedje T Journal of Crystal Growth, 311(7), 1872, 2009 |
| 5 |
Molecular beam epitaxy growth of neodymium-doped yttrium aluminum perovskite Kumaran R, Webster SE, Penson S, Li W, Tiedje T Journal of Crystal Growth, 311(7), 2191, 2009 |
| 6 |
Linear smoothing of GaAs(100) during epitaxial growth on rough substrates Whitwick MB, Tiedje T, Li T Journal of Crystal Growth, 310(13), 3192, 2008 |
| 7 |
Atomistic basis for continuum growth equation: Description of morphological evolution of GaAs during molecular beam epitaxy Tiedje T, Ballestad A Thin Solid Films, 516(12), 3705, 2008 |
| 8 |
Molecular beam epitaxy growth of the dilute nitride GaAs1-xNx with a helical resonator plasma source Zangenberg N, Beaton DA, Tiedje T, Tixier S, Adamcyk M, Kumaran R, MacKenzie JA, Nodwell E, Young EC, Sproule G Journal of Vacuum Science & Technology A, 25(4), 850, 2007 |
| 9 |
Bismuth surfactant growth of the dilute nitride GaNxAs1-x Young EC, Tixier S, Tiedje T Journal of Crystal Growth, 279(3-4), 316, 2005 |
| 10 |
Predicting GaAs surface shapes during MBE regrowth on patterned substrates Ballestad A, Tiedje T, Schmid JH, Ruck BJ, Adamcyk M Journal of Crystal Growth, 271(1-2), 13, 2004 |