화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Device scaling effect on the spectral-directional absorptance of wafer's front side
Fu K, Chen YB, Hsu PF, Zhang ZMM, Timans PJ
International Journal of Heat and Mass Transfer, 51(19-20), 4911, 2008
2 Lnfluence of halo implant on leakage current and sheet resistance of ultrashallow p-n junctions
Faifer VN, Schroder DK, Current MI, Clarysse T, Timans PJ, Zangerle T, Vandervorst W, Wong TMH, Moussa A, Mccoy S, Gelpey J, Lerch W, Paul S, Bolze D, Halim J
Journal of Vacuum Science & Technology B, 25(5), 1588, 2007