검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
SiCBJT technology for power switching and RF applications Agarwal A, Ryu SH, Capell C, Richmond J, Palmour J, Bartlow H, Chow P, Scozzie S, Tipton W, Baynes T, Jones K Materials Science Forum, 457-460, 1141, 2004 |
| 2 |
Interface properties of 4H-SiC/SiO2 with MOS capacitors and FETs annealed in O-2, N2O, NO and CO2 Wang W, Banerjee S, Chow TP, Gutmann RJ, Issacs-Smith T, Williams J, Jones KA, Lelis A, Tipton W, Scozzie S, Agarwal A Materials Science Forum, 457-460, 1309, 2004 |