화학공학소재연구정보센터
검색결과 : 17건
No. Article
1 Catalytic, Directed C-C Bond Functionalization of Styrenes
Onodera S, Togashi R, Ishikawa S, Kochi T, Kakiuchi F
Journal of the American Chemical Society, 142(16), 7345, 2020
2 Comparison of O-2 and H2O as oxygen source for homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy
Konishi K, Goto K, Togashi R, Murakami H, Higashiwaki M, Kuramata A, Yamakoshi S, Monemar B, Kumagai Y
Journal of Crystal Growth, 492, 39, 2018
3 Influence of high-temperature processing on the surface properties of bulk AlN substrates
Tojo S, Yamamoto R, Tanaka R, Thieu QT, Togashi R, Nagashima T, Kinoshita T, Dalmau R, Schlesser R, Murakami H, Collazo R, Koukitu A, Monemar B, Sitar Z, Kumagai Y
Journal of Crystal Growth, 446, 33, 2016
4 Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor
Murakami H, Takekawa N, Shiono A, Thieu QT, Togashi R, Kumagai Y, Matsumoto K, Koukitu A
Journal of Crystal Growth, 456, 140, 2016
5 High rate InN growth by two-step precursor generation hydride vapor phase epitaxy
Togashi R, Thieu QT, Murakami H, Kumagai Y, Ishitani Y, Monemar B, Koukitu A
Journal of Crystal Growth, 422, 15, 2015
6 Thermodynamic study of beta-Ga2O3 growth by halide vapor phase epitaxy
Nomura K, Goto K, Togashi R, Murakami H, Kumagai Y, Kuramata A, Yamakoshi S, Koukitu A
Journal of Crystal Growth, 405, 19, 2014
7 Production of small nano-sized particles by complex formation between polycations and linearized plasmid DNA at a low pH
Togashi R, Akita H, Harashima H
Journal of Bioscience and Bioengineering, 116(4), 528, 2013
8 Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(10(1)over-bar3) crystal on GaAs(110) by MOVPE
Cho HC, Togashi R, Murakami H, Kumagai Y, Koukitu A
Journal of Crystal Growth, 367, 122, 2013
9 Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H-2 and N-2
Kumagai Y, Igi T, Ishizuki M, Togashi R, Murakami H, Takada K, Koukitu A
Journal of Crystal Growth, 350(1), 60, 2012
10 Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates
Togashi R, Nagashima T, Harada M, Murakami H, Kumagai Y, Yanagi H, Koukitu A
Journal of Crystal Growth, 360, 197, 2012