화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Morphology of interior interfaces in the novel dilute nitride Ga(NAsP)/GaP material system
Oberhoff S, Kunert B, Torunski T, Volz K, Stolz W
Journal of Crystal Growth, 298, 98, 2007
2 Material development for improved 1 eV (Galn)(NAs) solar cell structures
Volz K, Torunski T, Lackner D, Rubel O, Stolz W, Baur C, Muller S, Dimroth F, Bett AW
Journal of Solar Energy Engineering-Transactions of The ASME, 129(3), 266, 2007
3 Cluster formation and magnetic properties of Mn-incorporated (GaIn)As/InP layers grown by metal-organic vapor phase epitaxy
Hara S, Lampalzer M, Torunski T, Volz K, Treutmann W, Stolz W
Journal of Crystal Growth, 261(2-3), 330, 2004
4 Specific structural and compositional properties of (GaIn)(NAs) and their influence on optoelectronic device performance
Volz K, Torunski T, Kunert B, Rubel O, Nau S, Reinhard S, Stolz W
Journal of Crystal Growth, 272(1-4), 739, 2004
5 MOVPE growth experiments of the novel (GaIn)(NP)/GaP material system
Kunert B, Koch J, Torunski T, Volz K, Stolz W
Journal of Crystal Growth, 272(1-4), 753, 2004
6 Overgrowth experiments of ferromagnetic (MnGa)As-cluster layers by MOVPE
Lampalzer M, Volz K, Treutmann W, Nau S, Torunski T, Megges K, Lorberth J, Stolz W
Journal of Crystal Growth, 248, 474, 2003
7 Mesoscopic island structure at GaAs /(AlGa)As interfaces grown by MBE
Gottwaldt L, Pierz K, Ahlers FJ, Gobel EO, Nau S, Torunski T, Stolz W
Journal of Crystal Growth, 251(1-4), 85, 2003