검색결과 : 28건
No. | Article |
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1 |
InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET Cerba T, Hauchecorne P, Martin M, Moeyaert J, Alcotte R, Salem B, Eustache E, Bezard P, Chevalier X, Lombard G, Bassani F, David S, Beainy G, Tournie E, Patriarche G, Boutry H, Bawedin M, Baron T Journal of Crystal Growth, 510, 18, 2019 |
2 |
GaSb-based solar cells for multi junction integration on Si substrates Tournet J, Parola S, Vauthelin A, Cardenes DM, Soresi S, Martinez F, Lu Q, Cuminal Y, Carrington PJ, Decobert J, Krier A, Rouillard Y, Tournie E Solar Energy Materials and Solar Cells, 191, 444, 2019 |
3 |
Phosphonate monolayers on InAsSb and GaSb surfaces for mid-IR plasmonics Bomers M, Mezy A, Cerutti L, Barho F, Flores FGP, Tournie E, Taliercio T Applied Surface Science, 451, 241, 2018 |
4 |
In situ determination of the growth conditions of GaSbBi alloys Delorme O, Cerutti L, Tournie E, Rodriguez JB Journal of Crystal Growth, 495, 9, 2018 |
5 |
Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition Cerba T, Martin M, Moeyaert J, David S, Rouviere JL, Cerutti L, Alcotte R, Rodriguez JB, Bawedin M, Boutry H, Bassani F, Bogumilowicz Y, Gergaud P, Tournie E, Baron T Thin Solid Films, 645, 5, 2018 |
6 |
Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer Rodriguez JB, Cerutti L, Patriarche G, Largeau L, Madiomanana K, Tournie E Journal of Crystal Growth, 477, 65, 2017 |
7 |
Growth and characterization of AlInAsSb layers lattice-matched to GaSb Tournet J, Rouillard Y, Tournie E Journal of Crystal Growth, 477, 72, 2017 |
8 |
Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys Delorme O, Cerutti L, Tournie E, Rodriguez JB Journal of Crystal Growth, 477, 144, 2017 |
9 |
X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates Rodriguez JB, Madiomanana K, Cerutti L, Castellano A, Tournie E Journal of Crystal Growth, 439, 33, 2016 |
10 |
Silicon surface preparation for III-V molecular beam epitaxy Madiomanana K, Bahri M, Rodriguez JB, Largeau L, Cerutti L, Mauguin O, Castellano A, Patriarche G, Tournie E Journal of Crystal Growth, 413, 17, 2015 |