화학공학소재연구정보센터
검색결과 : 28건
No. Article
1 InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET
Cerba T, Hauchecorne P, Martin M, Moeyaert J, Alcotte R, Salem B, Eustache E, Bezard P, Chevalier X, Lombard G, Bassani F, David S, Beainy G, Tournie E, Patriarche G, Boutry H, Bawedin M, Baron T
Journal of Crystal Growth, 510, 18, 2019
2 GaSb-based solar cells for multi junction integration on Si substrates
Tournet J, Parola S, Vauthelin A, Cardenes DM, Soresi S, Martinez F, Lu Q, Cuminal Y, Carrington PJ, Decobert J, Krier A, Rouillard Y, Tournie E
Solar Energy Materials and Solar Cells, 191, 444, 2019
3 Phosphonate monolayers on InAsSb and GaSb surfaces for mid-IR plasmonics
Bomers M, Mezy A, Cerutti L, Barho F, Flores FGP, Tournie E, Taliercio T
Applied Surface Science, 451, 241, 2018
4 In situ determination of the growth conditions of GaSbBi alloys
Delorme O, Cerutti L, Tournie E, Rodriguez JB
Journal of Crystal Growth, 495, 9, 2018
5 Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition
Cerba T, Martin M, Moeyaert J, David S, Rouviere JL, Cerutti L, Alcotte R, Rodriguez JB, Bawedin M, Boutry H, Bassani F, Bogumilowicz Y, Gergaud P, Tournie E, Baron T
Thin Solid Films, 645, 5, 2018
6 Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer
Rodriguez JB, Cerutti L, Patriarche G, Largeau L, Madiomanana K, Tournie E
Journal of Crystal Growth, 477, 65, 2017
7 Growth and characterization of AlInAsSb layers lattice-matched to GaSb
Tournet J, Rouillard Y, Tournie E
Journal of Crystal Growth, 477, 72, 2017
8 Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys
Delorme O, Cerutti L, Tournie E, Rodriguez JB
Journal of Crystal Growth, 477, 144, 2017
9 X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates
Rodriguez JB, Madiomanana K, Cerutti L, Castellano A, Tournie E
Journal of Crystal Growth, 439, 33, 2016
10 Silicon surface preparation for III-V molecular beam epitaxy
Madiomanana K, Bahri M, Rodriguez JB, Largeau L, Cerutti L, Mauguin O, Castellano A, Patriarche G, Tournie E
Journal of Crystal Growth, 413, 17, 2015