검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Understanding the growth of p-doped 4H-SiC layers using vapour-liquid-solid transport Vo-Ha A, Carole D, Lazar M, Tournier D, Cauwet F, Souliere V, Thierry-Jebali N, Brosselard P, Planson D, Brylinski C, Ferro G Thin Solid Films, 548, 125, 2013 |
| 2 |
4H-SiC MOS structures fabricated from RTCVD Si layers oxidized in diluted N2O Perez-Tomas A, Tournier D, Godignon P, Mestres N, Millan J Materials Science Forum, 483, 673, 2005 |
| 3 |
Temperature impact on high-current 1.2kV SiC Schottky rectifiers Jorda X, Tournier D, Rebollo J, Millan J, Godignon P Materials Science Forum, 483, 929, 2005 |
| 4 |
Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal Perez R, Mestres N, Tournier D, Jorda X, Vellvehi M, Godignon P Materials Science Forum, 483, 945, 2005 |
| 5 |
Electrical characterization of deposited and oxidized Ta2Si as dielectric film for SiC metal-insulator-semiconductor structures. Perez A, Tournier D, Montserrat J, Mestres N, Sandiumenge F, Millan J Materials Science Forum, 457-460, 845, 2004 |
| 6 |
SiC-based current limiter devices Chante JP, Tournier D, Planson D, Raynaud C, Lazar M, Locatelli ML, Brosselard P Materials Science Forum, 457-460, 951, 2004 |
| 7 |
On-chip temperature monitoring of a SiC current limiter Tournier D, Godignon P, Millan J, Planson D, Chante JP, Sarrus F, de Palma JF Materials Science Forum, 457-460, 1021, 2004 |
| 8 |
A highly effective edge termination design for SiC planar high power devices Perez R, Mestres N, Blanque S, Tournier D, Jorda X, Godignon P, Nipoti R Materials Science Forum, 457-460, 1253, 2004 |
| 9 |
Simulation study of a novel current-limiting device: A vertical alpha-SiC JFET - Controlled current limiter Tournier D, Godignon P, Planson D, Chante JP, Sarrus F Materials Science Forum, 389-3, 1243, 2002 |
| 10 |
Compatibility of VJFET technology with MESFET fabrication and its interest for system integration: Fabrication of 6H and 4H-SiC 110 V lateral MESFET Tournier D, Godignon P, Montserrat J, Planson D, Chante JP, Sarrus F Materials Science Forum, 389-3, 1403, 2002 |