화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Complete HVPE experimental investigations: Cartography of SAG GaN towards quasi-substrates or nanostructures
Chelda-Gourmala O, Trassoudaine A, Andre Y, Bouchoule S, Gil E, Tourret J, Castelluci D, Cadoret R
Journal of Crystal Growth, 312(12-13), 1899, 2010
2 A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE)
Tourret J, Gourmala O, Andre Y, Trassoudaine A, Gil E, Castelluci D, Cadoret R
Journal of Crystal Growth, 311(6), 1460, 2009
3 Low-cost high-quality GaN by one-step growth
Tourret J, Gourmala O, Trassoudaine A, Andre Y, Gil E, Castelluci D, Cadoret R
Journal of Crystal Growth, 310(5), 924, 2008
4 Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers
Andre Y, Trassoudaine A, Tourret J, Cadoret R, Gil E, Castelluci D, Aoude O, Disseix P
Journal of Crystal Growth, 306(1), 86, 2007