화학공학소재연구정보센터
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No. Article
1 State creation under gate-bias stress in polysilicon TFTs studied from the temperature-transfer characteristics behavior
Toutah H, Llibre JF, Tala-Ighil B, Boudart B, Mohammed-Brahim T
Thin Solid Films, 427(1-2), 340, 2003
2 Stability of unhydrogenated polysilicon thin film transistors and structural quality of the channel material
Toutah H, Tala-Ighil B, Llibre JF, Rahal A, Mourgues K, Helen Y, Brahim TM, Dassow R, Kohler JR
Thin Solid Films, 383(1-2), 299, 2001