| 1 |
Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers
Baklenov O, Lubyshev D, Wu Y, Fang XM, Fastenau JM, Leung L, Towner FJ, Cornfeld AB, Liu WK
Journal of Vacuum Science & Technology B, 20(3), 1200, 2002 |
| 2 |
Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and C
Specht P, Lutz RC, Zhao R, Weber ER, Liu WK, Bacher K, Towner FJ, Stewart TR, Luysberg M
Journal of Vacuum Science & Technology B, 17(3), 1200, 1999 |
| 3 |
Material Uniformity Improvements in a Gen-II Molecular-Beam Epitaxy System
Svensson SP, Towner FJ, Gill DM
Journal of Vacuum Science & Technology B, 15(3), 719, 1997 |
| 4 |
Room-Temperature Red-Light Photoluminescence from AlGaAs Multiple-Quantum-Well Structures at Very-Low Excitation Intensities
Towner FJ
Journal of Vacuum Science & Technology B, 14(3), 2315, 1996 |
| 5 |
Room-Temperature Photoluminescence from Modulation-Doped AlGaAs/InGaAs/GaAs Quantum-Wells
Svensson SP, Gill DM, Towner FJ, Uppal PN
Journal of Vacuum Science & Technology B, 12(1), 134, 1994 |
| 6 |
Characterization and Improvement of the Layer Uniformity for Large-Area Quantum-Well Device Arrays Grown in an Intevac Varian Gen-II Molecular-Beam Epitaxy System
Svensson SP, Towner FJ
Journal of Vacuum Science & Technology B, 12(2), 1086, 1994 |
