검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Novel buried field rings edge termination for 4H-SiC high-voltage devices Mihaila A, Udrea F, Godignon P, Trajkovic T, Brezeanu G, Rebollo J, Millan J Materials Science Forum, 433-4, 891, 2002 |
| 2 |
Suppression of parasitic JFET effect in trench IGBTs by using a self-aligned p base process Yuan X, Trajkovic T, Udrea F, Thomson J, Waind PR, Taylor P, Amaratunga GAJ Solid-State Electronics, 46(11), 1907, 2002 |