검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
The effect of annealing in forming gas on the a-IGZO thin film transistor performance and valence band cut-off of IGZO on SiNx Kamal R, Chandravanshi P, Choi DK, Bobade SM Current Applied Physics, 15(5), 648, 2015 |
| 2 |
Improvements in the device characteristics of IZO-based transparent thin-film transistors with co-sputtered HfO2-Al2O3 gate dielectrics Son H, Kim J, Yang J, Cho D, Yi M Current Applied Physics, 11(4), S135, 2011 |
| 3 |
Amorphous In-Ga-Zn-O thin-film transistor with coplanar homojunction structure Sato A, Shimada M, Abe K, Hayashi R, Kumomi H, Nomura K, Kamiya T, Hirano M, Hosono H Thin Solid Films, 518(4), 1309, 2009 |
| 4 |
[기획특집 - 반도체 기술] 산화물 박막트랜지스터 기술 현황 및 전망 김대환, 강진규, 양기정, 도윤선, 성시준, 손대호, 최병대 Korean Industrial Chemistry News, 11(5), 1, 2008 |
| 5 |
Amorphous oxide channel TFTs Kumomi H, Nomura K, Kamiya T, Hosono H Thin Solid Films, 516(7), 1516, 2008 |
| 6 |
ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor Lim SJ, Kwon SJ, Kim H Thin Solid Films, 516(7), 1523, 2008 |
| 7 |
A study on the electrical properties of ZnO based transparent TFTs Barquinha P, Fortunato E, Goncalves A, Pimentel A, Marques A, Pereira L, Martins R Materials Science Forum, 514-516, 68, 2006 |