화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Power Trench MOSFETs with very low specific on-resistance for 25 V applications
Goarin P, van Dalen R, Koops G, Le Cam C
Solid-State Electronics, 51(11-12), 1589, 2007
2 Study of 4H-SiC trench MOSFET structures
Chen L, Guy OJ, Jennings MR, Igic P, Wilks SP, Mawby PA
Solid-State Electronics, 49(7), 1081, 2005
3 A numerical comparison between MOS control and junction control high voltage devices in SiC technology
Mihaila A, Udrea F, Brezeanu G, Amaratunga G
Solid-State Electronics, 47(4), 607, 2003
4 SiC junction control, an alternative to MOS control high voltage switching devices
Mihaila A, Udrea F, Brezeanu G, Azar R, Amaratunga G
Materials Science Forum, 353-356, 723, 2001