화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Influence of overgrown micropipes in the active area of SIC Schottky diodes on long term reliability
Rupp R, Treu M, Turkes P, Beermann H, Scherg T, Preis H, Cerva H
Materials Science Forum, 483, 925, 2005
2 Generation of stacking faults in highly doped n-type 4H-SiC substrates
Zhang M, Hobgood HM, Treu M, Pirouz P
Materials Science Forum, 457-460, 759, 2004
3 Challenges and first results of SiC Schottky diode manufacturing using a 3 inch technology
Treu M, Rupp R, Brunner H, Dahlquist F, Hecht C
Materials Science Forum, 457-460, 981, 2004
4 Temperature dependence of forward and reverse characteristics of Ti, W, Ta and Ni Schottky diodes on 4H-SiC
Treu M, Rupp R, Kapels H, Bartsch W
Materials Science Forum, 353-356, 679, 2001
5 Reliability and degradation of metal-oxide-semiconductor capacitors on 4H-and 6H-silicon carbide
Treu M, Schorner R, Friedrichs P, Rupp R, Wiedenhofer A, Stephani D, Ryssel H
Materials Science Forum, 338-3, 1089, 2000
6 Performance and reliability issues of SiC-Schottky diodes
Rupp R, Treu M, Mauder A, Griebl E, Werner W, Bartsch W, Stephani D
Materials Science Forum, 338-3, 1167, 2000