검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Trigate nanowire MOSFETs analog figures of merit Kilchytska V, Makovejev S, Barraud S, Poiroux T, Raskin JP, Flandre D Solid-State Electronics, 112, 78, 2015 |
| 2 |
Strained Si and SiGe tunnel-FETs and complementary tunnel-FET inverters with minimum gate lengths of 50 nm Knoll L, Richter S, Nichau A, Trellenkamp S, Schafer A, Bourdelle KK, Hartmann JM, Zhao QT, Mantl S Solid-State Electronics, 97, 76, 2014 |
| 3 |
Scaling of high-kappa/metal-gate TriGate SOI nanowire transistors down to 10 nm width Coquand R, Barraud S, Casse M, Leroux P, Vizioz C, Comboroure C, Perreau P, Ernst E, Samson MP, Maffini-Alvaro V, Tabone C, Barnola S, Munteanu D, Ghibaudo G, Monfray S, Boeuf F, Poiroux T Solid-State Electronics, 88, 32, 2013 |
| 4 |
Low temperature selective epitaxial growth of SiCP on Si(110) oriented surfaces Bauer M, Thomas SG Thin Solid Films, 520(8), 3144, 2012 |
| 5 |
3D-Monte Carlo study of short channel tri-gate nanowire MOSFETs David JK, Register LF, Banerjee SK Solid-State Electronics, 61(1), 7, 2011 |
| 6 |
Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations Yan R, Lynch D, Cayron T, Lederer D, Afzalian A, Lee CW, Dehdashti N, Colinge JP Solid-State Electronics, 52(12), 1872, 2008 |
| 7 |
Influence of crystal orientation and body doping on trigate transistor performance Landgraf E, Rosner W, Stadele M, Dreeskornfeld L, Hartwich J, Hofmann F, Kretz J, Lutz T, Luyken RJ, Schulz T, Specht M, Risch L Solid-State Electronics, 50(1), 38, 2006 |