검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
0.18 mu m KrF lithography using optical proximity correction based on empirical behavior modeling Tritchkov A, Stirniman J, Gangala H, Ronse K Journal of Vacuum Science & Technology B, 16(6), 3398, 1998 |
| 2 |
Optically induced mask critical dimension error magnification in 248 nm lithography Randall JN, Tritchkov A Journal of Vacuum Science & Technology B, 16(6), 3606, 1998 |
| 3 |
Characterization and Correction of Optical Proximity Effects in Deep-Ultraviolet Lithography Using Behavior Modeling Yen A, Tritchkov A, Stirniman JP, Vandenberghe G, Jonckheere R, Ronse K, Vandenhove L Journal of Vacuum Science & Technology B, 14(6), 4175, 1996 |
| 4 |
Use of Positive and Negative Chemically Amplified Resists in Electron-Beam Direct-Write Lithography Tritchkov A, Jonckheere R, Vandenhove L Journal of Vacuum Science & Technology B, 13(6), 2986, 1995 |