검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
TOPOLOGICAL INSULATORS AND SUPERCONDUCTIVITY The integrity of two sides Tsai WF, Lin H Nature Materials, 15(9), 927, 2016 |
| 2 |
Observation of Fermi arc surface states in a topological metal Xu SY, Liu C, Kushwaha SK, Sankar R, Krizan JW, Belopolski I, Neupane M, Bian G, Alidoust N, Chang TR, Jeng HT, Huang CY, Tsai WF, Lin H, Shibayev PP, Chou FC, Cava RJ, Hasan MZ Science, 347(6219), 294, 2015 |
| 3 |
Characteristics of plasma immersion ion implantation treatment on tungsten nanocrystal nonvolatile memory Lai CS, Wang JC, Chang LC, Liao YK, Chou PC, Chang WC, Ai CF, Tsai WF Solid-State Electronics, 77, 31, 2012 |
| 4 |
Electrical characteristics of SiGe pMOSFET devices with tantalum or titanium oxide higher-k dielectric stack Li CC, Chang-Liao KS, Fu CH, Tzeng TH, Lu CC, Hong HZ, Chen TC, Wang TK, Tsai WF, Ai CF Solid-State Electronics, 78, 17, 2012 |
| 5 |
Edge Passivation of Si Solar Cells by Omnidirectional Hydrogen Plasma Implantation Chen YY, Chen JY, Hsu RJ, Ho WS, Liu CW, Tsai WF, Ai CF Journal of the Electrochemical Society, 158(9), H912, 2011 |
| 6 |
Enhanced optical performance by energetic hydrogen passivation at Si/oxide interface Ho WS, Deng Y, Chen YY, Cheng TH, Liu CW, Tsai WF, Ai CF Thin Solid Films, 520(1), 448, 2011 |
| 7 |
Electrical characteristics of SiGe channel MOS devices with high-k/metal gate incorporated with nitrogen by plasma immersion ion implantation Fu CH, Chang-Liao KS, Du LW, Wang TK, Tsai WF, Ai CF Solid-State Electronics, 54(10), 1094, 2010 |