화학공학소재연구정보센터
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No. Article
1 Symmetrical unified compact model of short-channel double-gate MOSFETs
Papathanasiou K, Theodorou CG, Tsormpatzoglou A, Tassis DH, Dimitriadis CA, Bucher M, Ghibaudo G
Solid-State Electronics, 69, 55, 2012
2 Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs
Tsormpatzoglou A, Tassis DH, Dimitriadis CA, Ghibaudo G, Collaert N, Pananakakis G
Solid-State Electronics, 57(1), 31, 2011
3 Analytical unified threshold voltage model of short-channel FinFETs and implementation
Fasarakis N, Tsormpatzoglou A, Tassis DH, Dimitriadis CA, Papathanasiou K, Jomaah J, Ghibaudo G
Solid-State Electronics, 64(1), 34, 2011
4 Experimental characterization of the subthreshold leakage current in triple-gate FinFETs
Tsormpatzoglou A, Dimitriadis CA, Mouis M, Ghibaudo G, Collaert N
Solid-State Electronics, 53(3), 359, 2009
5 Noise spectroscopy of localized states in Au/n-GaAs Schottky diodes containing InAs quantum dots
Tsormpatzoglou A, Tassis DH, Dimitriadis CA, Kamarinos G, Frigeri P, Franchi S, Gombia E, Mosca R
Solid-State Electronics, 50(3), 340, 2006