화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Inversion domains in AlGaN films grown on patterned sapphire substrate
Kawamichi S, Nishino K, Sumiyoshi K, Tsukihara M, Yan FW, Sakai S
Journal of Crystal Growth, 298, 297, 2007
2 Al0.17Ga0.83N film with middle temperature-intermediate layer grown on trenched sapphire substrate by MOCVD
Sumiyoshi K, Tsukihara M, Kataoka K, Kawamichi S, Okimoto T, Nishino K, Naoi Y, Sakai S
Journal of Crystal Growth, 298, 300, 2007
3 Effect of middle temperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metalorganic chemical vapor deposition
Tsukihara M, Sumiyoshi K, Okimoto T, Kataoka K, Kawamichi S, Nishino K, Naoi Y, Sakai S
Journal of Crystal Growth, 300(1), 190, 2007
4 Interdiffusion induced In(Ga)NAs films growth on GaAs substrates by low-pressure metalorganic chemical vapor deposition
Yan FW, Naoi Y, Tsukihara M, Yadani T, Sakai S
Journal of Crystal Growth, 282(1-2), 29, 2005