검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Reduction of grown-in defects by high temperature annealing Adachi N, Hisatomi T, Sano M, Tsuya H Journal of the Electrochemical Society, 147(1), 350, 2000 |
| 2 |
Effect of heavy boron doping on oxide precipitate growth in Czochralski silicon Ono T, Asayama E, Horie H, Hourai M, Sueoka K, Tsuya H, Rozgonyi GA Journal of the Electrochemical Society, 146(6), 2239, 1999 |
| 3 |
Oxide precipitate-induced dislocation generation in heavily boron-doped Czochralski silicon Ono T, Romanowski A, Asayama E, Horie H, Sueoka K, Tsuya H, Rozgonyi GA Journal of the Electrochemical Society, 146(9), 3461, 1999 |
| 4 |
Gettering of Cu and Ni Impurities in Simox Wafers Jablonski J, Miyamura Y, Imai M, Tsuya H Journal of the Electrochemical Society, 142(6), 2059, 1995 |