화학공학소재연구정보센터
검색결과 : 13건
No. Article
1 Physically unclonable cryptographic primitives using self-assembled carbon nanotubes
Hu ZY, Comeras JMML, Park H, Tang JS, Afzali A, Tulevski GS, Hannon JB, Liehr M, Han SJ
Nature Nanotechnology, 11(6), 559, 2016
2 End-bonded contacts for carbon nanotube transistors with low, size-independent resistance
Cao Q, Han SJ, Tersoff J, Franklin AD, Zhu Y, Zhang Z, Tulevski GS, Tang JS, Haensch W
Science, 350(6256), 68, 2015
3 Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics
Cao Q, Han SJ, Tulevski GS, Zhu Y, Lu DD, Haensch W
Nature Nanotechnology, 8(3), 180, 2013
4 Engineering of Contact Resistance between Transparent Single-Walled Carbon Nanotube Films and a-Si:H Single Junction Solar Cells by Gold Nanodots
Kim J, Hong AJ, Chandra B, Tulevski GS, Sadana DK
Advanced Materials, 24(14), 1899, 2012
5 High-density integration of carbon nanotubes via chemical self-assembly
Park H, Afzali A, Han SJ, Tulevski GS, Franklin AD, Tersoff J, Hannon JB, Haensch W
Nature Nanotechnology, 7(12), 787, 2012
6 High performance metal microstructure for carbon-based transparent conducting electrodes
Kasry A, El Ashry M, Nistor RA, Bol AA, Tulevski GS, Martyna GJ, Newns DM
Thin Solid Films, 520(15), 4827, 2012
7 Directed assembly of single-walled carbon nanotubes via drop-casting onto a UV-patterned photosensitive monolayer
Bardecker JA, Afzali A, Tulevski GS, Graham T, Hannon JB, Jen AKY
Journal of the American Chemical Society, 130(23), 7226, 2008
8 Chemically assisted directed assembly of carbon nanotubes for the fabrication of large-scale device arrays
Tulevski GS, Hannon J, Afzali A, Chen Z, Avouris P, Kagan CR
Journal of the American Chemical Society, 129(39), 11964, 2007
9 Chemical complementarity in the contacts for nanoscale organic field-effect transistors
Tulevski GS, Miao Q, Afzali A, Graham TO, Kagan CR, Nuckolls C
Journal of the American Chemical Society, 128(6), 1788, 2006
10 Attaching organic semiconductors to gate oxides: In situ assembly of monolayer field effect transistors
Tulevski GS, Miao Q, Fukuto M, Abram R, Ocko B, Pindak R, Steigerwald ML, Kagan CR, Nuckolls C
Journal of the American Chemical Society, 126(46), 15048, 2004