| 1 |
Exact identities between values of the tunnel current in the redox-mediated tunneling contacts and the positions of the extrema of the tunnel current/overvoltage characteristics
Medvedev IG
Journal of Electroanalytical Chemistry, 799, 333, 2017 |
| 2 |
Tunnel current through a miniband in InGaAs quantum dot superlattice solar cells
Sugaya T, Numakami O, Furue S, Komaki H, Amano T, Matsubara K, Okano Y, Niki S
Solar Energy Materials and Solar Cells, 95(10), 2920, 2011 |
| 3 |
Effect of deuterium on passivation of Si surfaces
Mizsei J, Pap AE, Gillemot K, Battistig G
Applied Surface Science, 256(19), 5765, 2010 |
| 4 |
Silicon surface passivation by static charge
Mizsei J
Applied Surface Science, 252(21), 7691, 2006 |
| 5 |
Correlation between interface state properties and electron transport at ultrathin insulator/Si interfaces
Shiozawa T, Yoshida T, Hashizume T, Hasegawa H
Applied Surface Science, 159, 98, 2000 |
| 6 |
Tunnel current, conductance and magnetoresistance in double-barrier magnetic tunnel junctions
Xu HY, Kang J, Yu WX, Mai ZH
Thin Solid Films, 375(1-2), 210, 2000 |
