1 |
Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics Lim D, Han H, Choi C Solid-State Electronics, 154, 1, 2019 |
2 |
Hetero structure PNPN tunnel FET: Analysis of scaling effects on counter doping Joseph HB, Singh SK, Hariharan RM, Priya PA, Kumar NM, Thiruvadigal DJ Applied Surface Science, 449, 823, 2018 |
3 |
Low frequency noise in tunneling field effect transistors Bu ST, Huang DM, Jiao GF, Yu HY, Li MF Solid-State Electronics, 137, 95, 2017 |
4 |
Design and analysis of Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) Seo JH, Yoon YJ, Lee S, Lee JH, Cho S, Kang IM Current Applied Physics, 15(3), 208, 2015 |
5 |
Subthreshold swing characteristics of nanowire tunneling FETs with variation in gate coverage and channel diameter Kim M, Jeon Y, Kim Y, Kim S Current Applied Physics, 15(7), 780, 2015 |
6 |
Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors Schulze J, Blech A, Datta A, Fischer IA, Hahnel D, Naasz S, Rolseth E, Tropper EM Solid-State Electronics, 110, 59, 2015 |
7 |
Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors Lee JS, Seo JH, Cho S, Lee JH, Kang SW, Bae JH, Cho ES, Kang IM Current Applied Physics, 13(6), 1143, 2013 |
8 |
InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 V Kim KR, Yoon YJ, Cho S, Seo JH, Lee JH, Bae JH, Cho ES, Kang IM Current Applied Physics, 13(9), 2051, 2013 |
9 |
Design optimization of tunneling field-effect transistor based on silicon nanowire PNPN structure and its radio frequency characteristics Cho S, Kang IM Current Applied Physics, 12(3), 673, 2012 |
10 |
Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors Schmidt M, Minamisawa RA, Richter S, Luptak R, Hartmann JM, Buca D, Zhao QT, Mantl S Solid-State Electronics, 71, 42, 2012 |