화학공학소재연구정보센터
검색결과 : 16건
No. Article
1 Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics
Lim D, Han H, Choi C
Solid-State Electronics, 154, 1, 2019
2 Hetero structure PNPN tunnel FET: Analysis of scaling effects on counter doping
Joseph HB, Singh SK, Hariharan RM, Priya PA, Kumar NM, Thiruvadigal DJ
Applied Surface Science, 449, 823, 2018
3 Low frequency noise in tunneling field effect transistors
Bu ST, Huang DM, Jiao GF, Yu HY, Li MF
Solid-State Electronics, 137, 95, 2017
4 Design and analysis of Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET)
Seo JH, Yoon YJ, Lee S, Lee JH, Cho S, Kang IM
Current Applied Physics, 15(3), 208, 2015
5 Subthreshold swing characteristics of nanowire tunneling FETs with variation in gate coverage and channel diameter
Kim M, Jeon Y, Kim Y, Kim S
Current Applied Physics, 15(7), 780, 2015
6 Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
Schulze J, Blech A, Datta A, Fischer IA, Hahnel D, Naasz S, Rolseth E, Tropper EM
Solid-State Electronics, 110, 59, 2015
7 Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors
Lee JS, Seo JH, Cho S, Lee JH, Kang SW, Bae JH, Cho ES, Kang IM
Current Applied Physics, 13(6), 1143, 2013
8 InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 V
Kim KR, Yoon YJ, Cho S, Seo JH, Lee JH, Bae JH, Cho ES, Kang IM
Current Applied Physics, 13(9), 2051, 2013
9 Design optimization of tunneling field-effect transistor based on silicon nanowire PNPN structure and its radio frequency characteristics
Cho S, Kang IM
Current Applied Physics, 12(3), 673, 2012
10 Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors
Schmidt M, Minamisawa RA, Richter S, Luptak R, Hartmann JM, Buca D, Zhao QT, Mantl S
Solid-State Electronics, 71, 42, 2012