| 1 |
Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics
Lim D, Han H, Choi C
Solid-State Electronics, 154, 1, 2019 |
| 2 |
Low frequency noise in tunneling field effect transistors
Bu ST, Huang DM, Jiao GF, Yu HY, Li MF
Solid-State Electronics, 137, 95, 2017 |
| 3 |
Design and analysis of Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET)
Seo JH, Yoon YJ, Lee S, Lee JH, Cho S, Kang IM
Current Applied Physics, 15(3), 208, 2015 |
| 4 |
Subthreshold swing characteristics of nanowire tunneling FETs with variation in gate coverage and channel diameter
Kim M, Jeon Y, Kim Y, Kim S
Current Applied Physics, 15(7), 780, 2015 |
| 5 |
Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors
Lee JS, Seo JH, Cho S, Lee JH, Kang SW, Bae JH, Cho ES, Kang IM
Current Applied Physics, 13(6), 1143, 2013 |
| 6 |
Design optimization of tunneling field-effect transistor based on silicon nanowire PNPN structure and its radio frequency characteristics
Cho S, Kang IM
Current Applied Physics, 12(3), 673, 2012 |
| 7 |
Analytical model of single-gate silicon-on-insulator (SOI) tunneling field-effect transistors (TFETs)
Lee MJ, Choi WY
Solid-State Electronics, 63(1), 110, 2011 |
| 8 |
Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors
Sandow C, Knoch J, Urban C, Zhao QT, Mantl S
Solid-State Electronics, 53(10), 1126, 2009 |
