| 1 |
Effect of the ion bombardment energy on silicon dioxide films deposited from oxygen/tetraethoxysilane plasmas in a helicon reactor
Goghero D, Goullet A, Borvon G, Turban G
Thin Solid Films, 471(1-2), 123, 2005 |
| 2 |
Growth mechanisms of carbon nanotubes converted from diamond-like carbon films
Sarangi D, Godon C, Granier A, Goullet A, Turban G, Chauvet O
Chemical Physics Letters, 397(4-6), 516, 2004 |
| 3 |
Etching behavior of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane
Tserepi A, Cordoyiannis G, Patsis GP, Constantoudis V, Gogolides E, Valamontes ES, Eon D, Peignon MC, Cartry G, Cardinaud C, Turban G
Journal of Vacuum Science & Technology B, 21(1), 174, 2003 |
| 4 |
Langmuir probe measurements in an inductively coupled plasma: Electron energy distribution functions in polymerizing fluorocarbon gases used for selective etching of SiO2
Gaboriau F, Peignon MC, Cartry G, Rolland L, Eon D, Cardinaud C, Turban G
Journal of Vacuum Science & Technology A, 20(3), 919, 2002 |
| 5 |
Evaluation of the ion bombardment energy on silicon dioxide films deposited from O-2/TEOS plasmas on Si and unstrained Si0.83Ge0.17/Si substrates
Goghero D, Goullet A, Lebrizoual L, Meyer F, Turban G
Journal of Vacuum Science & Technology B, 20(6), 2281, 2002 |
| 6 |
Study of the early stage of SiO2 growth by a TEOS-O-2 plasma mixture using a three-dimensional Monte Carlo model
Rhallabi A, Turban G
Journal of Vacuum Science & Technology A, 19(3), 743, 2001 |
| 7 |
Measurements of rf bias effect in a dual electron cyclotron resonance-rf methane plasma using the Langmuir probe method
Hong JG, Granier A, Leteinturier C, Peignon MC, Turban G
Journal of Vacuum Science & Technology A, 18(2), 497, 2000 |
| 8 |
Estimation of surface kinetic parameters and two-dimensional simulation of InP pattern features during CH4-H-2 plasma etching
Rhallabi A, Houlet L, Turban G
Journal of Vacuum Science & Technology A, 18(4), 1366, 2000 |
| 9 |
Optical spectroscopic analyses of OH incorporation into SiO2 films deposited from O-2/tetraethoxysilane plasmas
Goullet A, Vallee C, Granier A, Turban G
Journal of Vacuum Science & Technology A, 18(5), 2452, 2000 |
| 10 |
Estimation of the TEOS dissociation coefficient by electron impact
Vallee C, Rhallabi A, Granier A, Goullet A, Turban G
Journal of Vacuum Science & Technology A, 18(6), 2728, 2000 |
