검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface Turski H, Krzyzewski F, Feduniewicz-Zmuda A, Wolny P, Siekacz M, Muziol G, Cheze C, Nowakowski-Szukudlarek K, Xing H, Jena D, Zaluska-Kotur M, Skierbiszewski C Applied Surface Science, 484, 771, 2019 |
| 2 |
Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE Turski H, Feduniewicz-Zmuda A, Sawicka M, Reszka A, Kowalski B, Krysko M, Wolny P, Smalc-Koziorowska J, Siekacz M, Muziol G, Nowakowski-Szukudlarek K, Grzanka S, Skierbiszewski C Journal of Crystal Growth, 512, 208, 2019 |
| 3 |
Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE Turski H, Muziol G, Siekacz M, Wolny P, Szkudlarek K, Feduniewicz-Zmuda A, Dybko K, Skierbiszewski C Journal of Crystal Growth, 482, 56, 2018 |
| 4 |
Miscut dependent surface evolution in the process of N-polar GaN (000(1)over-bar) growth under N-rich condition Krzyzewski F, Zaluska-Kotur MA, Turski H, Sawicka M, Skierbiszewski C Journal of Crystal Growth, 457, 38, 2017 |
| 5 |
Indium incorporation in semipolar (20(2)over-bar1) and nonpolar (10(1)over-bar0) InGaN grown by plasma assisted molecular beam epitaxy Sawicka M, Feduniewicz-Zmuda A, Krysko M, Turski H, Muziol G, Siekacz M, Wolny P, Skierbiszewski C Journal of Crystal Growth, 459, 129, 2017 |
| 6 |
Comparative study of semipolar (20(2)over-bar1), nonpolar (10(1)over-bar0) and polar (0001) InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy Sawicka M, Wolny P, Krysko M, Turski H, Szkudlarek K, Grzanka S, Skierbiszewski C Journal of Crystal Growth, 465, 43, 2017 |
| 7 |
Growth mechanisms in semipolar (20(2)over-bar1) and nonpolar m plane (10(1)over-bar0) AlGaN/GaN structures grown by PAMBE under N-rich conditions (vol 377C, pg 184, 2013) Sawicka M, Cheze C, Turski H, Smalc-Koziorowska J, Krysko M, Kret S, Remmele T, Albrecht M, Cywinski G, Grzegory I, Skierbiszewski C Journal of Crystal Growth, 415, 176, 2015 |
| 8 |
High power nitride laser diodes grown by plasma assisted molecular beam epitaxy Muziol G, Siekacz M, Turski H, Wolny P, Grzanka S, Grzanka E, Feduniewicz-Zmuda A, Borysiuk J, Sobczak K, Domagala J, Nowakowska-Siwinska A, Makarowa I, Perlin P, Skierbiszewski C Journal of Crystal Growth, 425, 398, 2015 |
| 9 |
Nonequivalent atomic step edges-Role of gallium and nitrogen atoms in the growth of InGaN layers Turski H, Siekacz M, Wasilewski ZR, Sawicka M, Porowski S, Skierbiszewski C Journal of Crystal Growth, 367, 115, 2013 |
| 10 |
Growth mechanisms in semipolar (2 0 (2)over-bar 1) and nonpolar m-plane (1 0 (1)over-bar 0) AlGaN/GaN structures grown by PAMBE under N-rich conditions Sawicka M, Cheze C, Turski H, Smalc-Koziorowska J, Krysko M, Kret S, Remmele T, Albrecht M, Cywinski G, Grzegory I, Skierbiszewski C Journal of Crystal Growth, 377, 184, 2013 |