| 1 |
Formation of parallel (111) twin boundaries in silicon growth from the melt explained by molecular dynamics simulations
Pohl J, Muller M, Seidl A, Albe K
Journal of Crystal Growth, 312(8), 1411, 2010 |
| 2 |
Comments on "Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods by M. Neubert, A. Kwasniewski and R. Fornari" J. Crystal Growth 310 (2008) 5270
Hurle DTJ, Dudley M
Journal of Crystal Growth, 312(9), 1659, 2010 |
| 3 |
Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods
Neubert M, Kwasniewski A, Fornari R
Journal of Crystal Growth, 310(24), 5270, 2008 |
| 4 |
Multiply twinned particles beyond the icosahedron
Nepijko SA, Hofmeister H, Sack-Kongehl H, Schlogl R
Journal of Crystal Growth, 213(1-2), 129, 2000 |
| 5 |
Verification of singular plane formation in CdTe homoepitaxy
Yoshioka Y, Shimizu K, Takagaki K, Kasuga M
Journal of Crystal Growth, 217(1-2), 102, 2000 |
