화학공학소재연구정보센터
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No. Article
1 Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition
Cerba T, Martin M, Moeyaert J, David S, Rouviere JL, Cerutti L, Alcotte R, Rodriguez JB, Bawedin M, Boutry H, Bassani F, Bogumilowicz Y, Gergaud P, Tournie E, Baron T
Thin Solid Films, 645, 5, 2018
2 Two-step growth of metamorphic GaAs/AlGaAs mirror on an InP substrate by MOCVD
Ohiso Y, Iga R
Thin Solid Films, 542, 317, 2013
3 Effect of growth pressure on the morphology evolution and doping characteristics in nonpolar a-plane GaN
Song KM, Kim JM, Kang BK, Shin CS, Ko CG, Kong BH, Cho HK, Yoon DH, Kim H, Hwang SM
Applied Surface Science, 258(8), 3565, 2012
4 New two-step growth of microcrystalline silicon thin films without incubation layer
Yue HY, Wu AM, Zhang XY, Li TJ
Journal of Crystal Growth, 322(1), 1, 2011
5 A strategy for the production of soluble human senescence marker protein-30 in Escherichia coli
Choi MS, Saxena A, Chilukuri N
Biochemical and Biophysical Research Communications, 393(3), 509, 2010
6 The effects of low temperature buffer layer on the growth of pure Ge on Si(001)
Shin KW, Kim HW, Kim J, Yang C, Lee S, Yoon E
Thin Solid Films, 518(22), 6496, 2010
7 High quality Ge epitaxial layers on Si by ultrahigh vacuum chemical vapor deposition
Kim HW, Shin KW, Lee GD, Yoon E
Thin Solid Films, 517(14), 3990, 2009
8 TEM studies of GaN layers grown in non-polar direction: Laterally overgrown and pendeo-epitaxial layers
Liliental-Weber Z
Journal of Crystal Growth, 310(17), 4011, 2008
9 Interpretation of calcite growth data using the two-step crystal growth model
Tai CY, Chang MC, Wu CK, Lin YC
Chemical Engineering Science, 61(16), 5346, 2006
10 Growth kinetics of CaF2 in a pH-stat fluidized-bed crystallizer
Tai CY, Chen PC, Tsao TM
Journal of Crystal Growth, 290(2), 576, 2006