화학공학소재연구정보센터
검색결과 : 18건
No. Article
1 Mobility extraction for short channel UTBB-FDSOI MOSFETs under back bias using an accurate inversion charge density model
Trojman L, Ragnarsson LA, Collaert N
Solid-State Electronics, 154, 24, 2019
2 28 nm FDSOI analog and RF Figures of Merit at N-2 cryogenic temperatures
Esfeh BK, Planes N, Haond M, Raskin JP, Flandre D, Kilchytska V
Solid-State Electronics, 159, 77, 2019
3 Experimental analysis and improvement of the DC method for self-heating estimation
Mori CAB, Agopian PGD, Martino JA
Solid-State Electronics, 159, 171, 2019
4 An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models
Pereira ASN, de Steel G, Planes N, Haond M, Giacomini R, Flandre D, Kilchytska V
Solid-State Electronics, 128, 67, 2017
5 Characterization and modelling of layout effects in SiGe channel pMOSFETs from 14 nm UTBB FDSOI technology
Berthelon R, Andrieu F, Ortolland S, Nicolas R, Poiroux T, Baylac E, Dutartre D, Josse E, Claverie A, Haond M
Solid-State Electronics, 128, 72, 2017
6 Assessment of 28 nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements
Esfeh BK, Kilchytska V, Barral V, Planes N, Haond M, Flandre D, Raskin JP
Solid-State Electronics, 117, 130, 2016
7 On the improvement of DC analog characteristics of FD SOI transistors by using asymmetric self-cascode configuration
de Souza M, Flandre D, Doria RT, Trevisoli R, Pavanello MA
Solid-State Electronics, 117, 152, 2016
8 Low voltage logic circuits exploiting gate level dynamic body biasing in 28 nm UTBB FD-SOI
Taco R, Levi I, Lanuzza M, Fish A
Solid-State Electronics, 117, 185, 2016
9 UTBB FDSOI suitability for IoT applications: Investigations at device, design and architectural levels
Berthier F, Beigne E, Heitzmann F, Debicki O, Christmann JF, Valentian A, Billoint O, Amat E, Morche D, Chairat S, Sentieys O
Solid-State Electronics, 125, 14, 2016
10 FinFET and UTBB for RF SOI communication systems
Raskin JP
Solid-State Electronics, 125, 73, 2016