| 1 |
Relation between the ion flux, gas phase composition, and wall conditions in chlorine plasma etching of silicon
Ullal SJ, Kim TW, Vahedi V, Aydil ES
Journal of Vacuum Science & Technology A, 21(3), 589, 2003 |
| 2 |
Effect of chamber wall conditions on Cl and Cl-2 concentrations in an inductively coupled plasma reactor
Ullal SJ, Godfrey AR, Edelberg E, Braly L, Vahedi V, Aydil ES
Journal of Vacuum Science & Technology A, 20(1), 43, 2002 |
| 3 |
Deposition of silicon oxychloride films on chamber walls during Cl-2/O-2 plasma etching of Si
Ullal SJ, Singh H, Vahedi V, Aydil ES
Journal of Vacuum Science & Technology A, 20(2), 499, 2002 |
| 4 |
Maintaining reproducible plasma reactor wall conditions: SF6 plasma cleaning of films deposited on chamber walls during Cl-2/O-2 plasma etching of Si
Ullal SJ, Singh H, Daugherty J, Vahedi V, Aydil ES
Journal of Vacuum Science & Technology A, 20(4), 1195, 2002 |
| 5 |
Formation and removal of composite halogenated silicon oxide and fluorocarbon films deposited on chamber walls during plasma etching of multiple film stacks
Ullal SJ, Singh H, Daugherty J, Vahedi V, Aydil ES
Journal of Vacuum Science & Technology B, 20(5), 1939, 2002 |
