검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Nitrogen mapping from ADF imaging analysis in quaternary dilute nitride superlattices Ruiz-Marin N, Reyes DF, Braza V, Gonzalo A, Ben T, Flores S, Utrilla AD, Ulloa JM, Gonzalez D Applied Surface Science, 475, 473, 2019 |
| 2 |
Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate Utrilla AD, Grossi DF, Reyes DF, Gonzalo A, Braza V, Ben T, Gonzalez D, Guzman A, Hierro A, Koenraad PM, Ulloa JM Applied Surface Science, 444, 260, 2018 |
| 3 |
Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications Reyes DF, Braza V, Gonzalo A, Utrilla AD, Ulloa JM, Ben T, Gonzalez D Applied Surface Science, 442, 664, 2018 |
| 4 |
Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing Braza V, Reyes DF, Gonzalo A, Utrilla AD, Ulloa JM, Flores S, Ben T, Gonzalez D Applied Surface Science, 459, 1, 2018 |
| 5 |
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells Utrilla AD, Reyes DF, Llorens JM, Artacho I, Ben T, Gonzalez D, Gacevic Z, Kurtz A, Guzman A, Hierro A, Ulloa JM Solar Energy Materials and Solar Cells, 159, 282, 2017 |
| 6 |
Wurtzite Zn1-y(MgxCd1-x)(y)O quaternary systems for photodiodes in visible spectral range Nieda Y, Suzuki M, Nakamura A, Temmyo J, Tabares G, Kurtz A, Lopez M, Ulloa JM, Hierro A, Munoz E Journal of Crystal Growth, 449, 27, 2016 |
| 7 |
Impact of alloyed capping layers on the performance of In As quantum dot solar cells Utrilla AD, Ulloa JM, Gacevic Z, Reyes DF, Artacho I, Ben T, Gonzalez D, Hierro A, Guzman A Solar Energy Materials and Solar Cells, 144, 128, 2016 |
| 8 |
Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots Gonzalez D, Reyes DF, Ben T, Utrilla AD, Guzman A, Hierro A, Ulloa JM Solar Energy Materials and Solar Cells, 145, 154, 2016 |
| 9 |
Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55 mu m with low optical degradation Milla MJ, Guzman A, Gargallo-Caballero R, Ulloa JM, Hierro A Journal of Crystal Growth, 323(1), 215, 2011 |
| 10 |
InGaAsN on GaAs (111)B for telecommunication laser application Miguel-Sanchez J, Guzman A, Ulloa JM, Hierro A, Munoz E Journal of Crystal Growth, 278(1-4), 234, 2005 |