검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics Lucovsky G, Long JP, Chung KB, Seo H, Watts B, Vasic R, Ulrich MD Journal of Vacuum Science & Technology B, 27(1), 294, 2009 |
| 2 |
Bulk defects in nano-crystalline and in non-crystalline HfO(2)-based thin film dielectrics Lee S, Seo H, Lucovsky G, Fleming LB, Ulrich MD, Luning J Thin Solid Films, 517(1), 437, 2008 |
| 3 |
Comparison of ultrathin SiO2/Si(100) and SiO2/Si(111) interfaces from soft x-ray photoelectron spectroscopy Ulrich MD, Rowe JE, Keister JW Journal of Vacuum Science & Technology B, 24(4), 2132, 2006 |
| 4 |
Near-edge absorption fine structure and UV photoemission spectroscopy studies of aligned single-walled carbon nanotubes on Si(100) substrates Fleming L, Ulrich MD, Efimenko K, Genzer J, Chan ASY, Madey TE, Oh SJ, Zhou O, Rowe JE Journal of Vacuum Science & Technology B, 22(4), 2000, 2004 |
| 5 |
Soft x-ray photoelectron spectroscopy of (HfO2)(x)(SiO2)(1-x) high-k gate-dielectric structures Ulrich MD, Hong JG, Rowe JE, Lucovsky G, Chan ASY, Madey TE Journal of Vacuum Science & Technology B, 21(4), 1777, 2003 |
| 6 |
Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications Ulrich MD, Rowe JE, Niu D, Parsons GN Journal of Vacuum Science & Technology B, 21(4), 1792, 2003 |
| 7 |
Interface electronic structure of Ta2O5-Al2O3 alloys for Si-field-effect transistor gate dielectric applications Ulrich MD, Johnson RS, Hong JG, Rowe JE, Lucovsky G, Quinton JS, Madey TE Journal of Vacuum Science & Technology B, 20(4), 1732, 2002 |