1 |
Organic and organic-inorganic hybrid polymer thin films deposited by PECVD using TEOS and cyclohexene for ULSI interlayer-dielectric application Seo HJ, Nam SH, Kim S, Boo JH Applied Surface Science, 354, 134, 2015 |
2 |
Study of porogen removal by atomic hydrogen generated by hot wire chemical vapor deposition for the fabrication of advanced low-k thin films Godavarthi S, Wang C, Verdonck P, Matsumoto Y, Koudriavtsev I, Dutt A, Tielens H, Baklanov MR Thin Solid Films, 575, 103, 2015 |
3 |
Ultra low-dielectric-constant methylated mesoporous silica films with high hydrophobicity and stability Yuan H, Xu JQ, Xie LL Materials Chemistry and Physics, 129(3), 1195, 2011 |
4 |
Application of scatterometric porosimetry to characterize porous ultra low-k patterned layers Licitra C, Bouyssou R, El Kodadi M, Haberfehlner G, Chevolleau T, Hazart J, Virot L, Besacier M, Schiavone P, Bertin F Thin Solid Films, 519(9), 2825, 2011 |
5 |
Architectural optimization of porous Ultra Low K dielectric material via Finite Element simulations Jauffres D, Dendievel R, Verdier M Thin Solid Films, 520(1), 430, 2011 |
6 |
Multi-solvent ellipsometric porosimetry analysis of plasma-treated porous SiOCH films Licitra C, Bouyssou R, Chevolleau T, Bertin F Thin Solid Films, 518(18), 5140, 2010 |
7 |
Structural study of nanoporous ultra low-k dielectrics using complementary techniques: Ellipsometric porosimetry, X-ray reflectivity and grazing incidence small-angle X-ray scattering Jousseaume V, Rolland G, Babonneau D, Simon JP Applied Surface Science, 254(2), 473, 2007 |
8 |
Chemically reactive nanoparticle for ultra-low k applications Shin JJ, Park SJ, Min SK, Rhee HW, Moon B, Yoon DY Molecular Crystals and Liquid Crystals, 445, 167, 2006 |
9 |
Ta/SiCN bilayer barrier for Cu-ultra low k integration Zhang DH, Yang LY, Li CY, Lu PW, Foo PD Thin Solid Films, 504(1-2), 235, 2006 |
10 |
Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration Yang LY, Zhang DH, Li CY, Liu R, Lu PW, Foo PD, Wee ATS Thin Solid Films, 504(1-2), 265, 2006 |