검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture Chan TK, Koh SY, Fang V, Markwitz A, Osipowicz T Applied Surface Science, 314, 322, 2014 |
| 2 |
C-V profiling of ultra-shallow junctions using step-like background profiles Popadic M, Milovanovic V, Xu CQ, Sarubbi F, Nanver LK Solid-State Electronics, 54(9), 890, 2010 |
| 3 |
Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation (PIII) Vervisch V, Larmande Y, Delaporte P, Sarnet T, Sentis M, Etienne H, Torregrosa F, Cristiano F, Fazzini PF Applied Surface Science, 255(10), 5647, 2009 |
| 4 |
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants Giubertoni D, Bersani A, Barozzi M, Pederzoli S, Iacob E, van den Berg JA, Werner M Applied Surface Science, 252(19), 7214, 2006 |
| 5 |
Boron ultra low energy SIMS depth profiling improved by rotating stage Bersani M, Giubertoni D, Iacob E, Barozzi M, Pederzoli S, Vanzetti L, Anderle M Applied Surface Science, 252(19), 7315, 2006 |
| 6 |
Laser doping for microelectronics and microtechnology Sarnet T, Kerrien G, Yaakoubi N, Bosseboeuf A, Dufour-Gergam E, Debarre D, Boulmer J, Kakushima K, Laviron C, Hernandez M, Venturini J, Bourouina T Applied Surface Science, 247(1-4), 537, 2005 |
| 7 |
A new technique to fabricate ultra-shallow-junctions, combining in situ vapour HCl etching and in situ doped epitaxial SiGe re-growth Loo R, Caymax M, Meunier-Beillard P, Peytier I, Holsteyns F, Kubicek S, Verheyen P, Lindsay R, Richard O Applied Surface Science, 224(1-4), 63, 2004 |
| 8 |
Characterization of Structure Dopant Behavior by Electron-Microscopy Maher DM, Zhang B Journal of Vacuum Science & Technology B, 12(1), 347, 1994 |