검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
PureGaB p(+)n Ge diodes grown in large windows to Si with a sub-300 nm transition region Sammak A, Qi L, de Boer WB, Nanver LK Solid-State Electronics, 74, 126, 2012 |
| 2 |
Indirect boron diffusion in amorphous silicon modeled by kinetic Monte Carlo Martin-Bragado I, Zographos N Solid-State Electronics, 55(1), 25, 2011 |
| 3 |
Boron-layer silicon photodiodes for high-efficiency low-energy electron detection Sakic A, Nanver LK, Scholtes TLM, Heerkens CTH, Knezevic T, van Veen G, Kooijman K, Vogelsang P Solid-State Electronics, 65-66, 38, 2011 |