검색결과 : 22건
| No. | Article |
|---|---|
| 1 |
Effects of uniaxial stress on the electrical structure and optical properties of Al-doped n-type ZnO Zhao YF, Yang HY, Yang B, Liu ZX, Yang P Solar Energy, 140, 21, 2016 |
| 2 |
Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs Buuhler RT, Agopian PGD, Collaert N, Simoen E, Claeys C, Martino JA Solid-State Electronics, 103, 209, 2015 |
| 3 |
Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs Koyama M, Casse M, Coquand R, Barraud S, Vizioz C, Comboroure C, Perreau P, Maffini-Alvaro V, Tabone C, Tosti L, Barnola S, Delaye V, Aussenac F, Ghibaudo G, Iwai H, Reimbold G Solid-State Electronics, 84, 46, 2013 |
| 4 |
Compact modeling of CMOS transistors under variable uniaxial stress Wacker N, Richter H, Hassan MU, Rempp H, Burghartz JN Solid-State Electronics, 57(1), 52, 2011 |
| 5 |
Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress Dinh TV, Hong SM, Jungemann C Solid-State Electronics, 60(1), 58, 2011 |
| 6 |
Strain engineering of nanoscale Si MOS devices Huang J, Chang ST, Hsieh BF, Liao MH, Wang WC, Lee CC Thin Solid Films, 518, S241, 2010 |
| 7 |
Thermal and Mechanical Properties of New Main-Chain Liquid-Crystalline Elastomers Sanchez-Ferrer A, Finkelmann H Molecular Crystals and Liquid Crystals, 508, 348, 2009 |
| 8 |
Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack Rochette F, Casse M, Mouis M, Haziot A, Pioger T, Ghibaudo G, Boulanger F Solid-State Electronics, 53(3), 392, 2009 |
| 9 |
Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress Kuo YJ, Chang TC, Yeh PH, Chen SC, Dai CH, Chao CH, Young TF, Cheng O, Huang CT Thin Solid Films, 517(5), 1715, 2009 |
| 10 |
Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substrates Pham AT, Jungemann C, Meinerzhagen B Solid-State Electronics, 52(9), 1437, 2008 |