화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 An improved model for InP/InGaAs double heterojunction bipolar transistors
Shi YX, Jin Z, Su YB, Cao YX, Wang Y
Solid-State Electronics, 81, 163, 2013
2 DC parameter extraction of equivalent circuit model in InGaAsSb heterojunction bipolar transistors including non-ideal effects in the base region
Chang YH, Cheng ZT
Solid-State Electronics, 61(1), 69, 2011
3 Silicon controlled rectifier (SCR) compact modeling based on VBIC and Gummel-Poon models
Lou LF, Liou JJ, Dong SR, Han Y
Solid-State Electronics, 53(2), 195, 2009
4 Implementation of a scalable VBIC model for SiGe : C HBTs
Chakravorty A, Scholz RF, Knoll D, Fox A, Senapati B, Maiti CK
Solid-State Electronics, 50(3), 399, 2006
5 Comparison of state-of-the-art bipolar compact models for SiGe-HBTs
Chakravorty A, Garg R, Maiti CK
Applied Surface Science, 224(1-4), 354, 2004