검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Assessment of "normally on" and "quasi on" SiCVJFET's in half-bridge circuits Mazzola MS, Casady JB, Merrett N, Sankin I, Draper W, Seale D, Bondarenko V, Koshka Y, Gafford J, Kelley R Materials Science Forum, 457-460, 1153, 2004 |
| 2 |
6A, 1kV 4H-SiC normally-off trenched-and-implanted vertical JFETs Zhao JH, Tone K, Li X, Alexandrov P, Fursin L, Weiner M Materials Science Forum, 457-460, 1213, 2004 |
| 3 |
A review of SiC power switch: achievements, difficulties and perspectives Sankin I, Merrett JN, Draper WA, Casady JRB, Casady JB Materials Science Forum, 457-460, 1249, 2004 |
| 4 |
Compatibility of VJFET technology with MESFET fabrication and its interest for system integration: Fabrication of 6H and 4H-SiC 110 V lateral MESFET Tournier D, Godignon P, Montserrat J, Planson D, Chante JP, Sarrus F Materials Science Forum, 389-3, 1403, 2002 |