| 1 |
Relation between the ion flux, gas phase composition, and wall conditions in chlorine plasma etching of silicon
Ullal SJ, Kim TW, Vahedi V, Aydil ES
Journal of Vacuum Science & Technology A, 21(3), 589, 2003 |
| 2 |
Effect of chamber wall conditions on Cl and Cl-2 concentrations in an inductively coupled plasma reactor
Ullal SJ, Godfrey AR, Edelberg E, Braly L, Vahedi V, Aydil ES
Journal of Vacuum Science & Technology A, 20(1), 43, 2002 |
| 3 |
Deposition of silicon oxychloride films on chamber walls during Cl-2/O-2 plasma etching of Si
Ullal SJ, Singh H, Vahedi V, Aydil ES
Journal of Vacuum Science & Technology A, 20(2), 499, 2002 |
| 4 |
Maintaining reproducible plasma reactor wall conditions: SF6 plasma cleaning of films deposited on chamber walls during Cl-2/O-2 plasma etching of Si
Ullal SJ, Singh H, Daugherty J, Vahedi V, Aydil ES
Journal of Vacuum Science & Technology A, 20(4), 1195, 2002 |
| 5 |
Semiempirical profile simulation of aluminum etching in Cl-2/BCl3 plasma
Cooperberg DJ, Vahedi V, Gottscho RA
Journal of Vacuum Science & Technology A, 20(5), 1536, 2002 |
| 6 |
Formation and removal of composite halogenated silicon oxide and fluorocarbon films deposited on chamber walls during plasma etching of multiple film stacks
Ullal SJ, Singh H, Daugherty J, Vahedi V, Aydil ES
Journal of Vacuum Science & Technology B, 20(5), 1939, 2002 |
| 7 |
High Selectivity Plasma-Etching of Silicon Dioxide with a Dual-Frequency 27/2 MHz Capacitive Radio-Frequency Discharge
Tsai W, Mueller G, Lindquist R, Frazier B, Vahedi V
Journal of Vacuum Science & Technology B, 14(5), 3276, 1996 |
| 8 |
2-Dimensional Self-Consistent Fluid Simulation of Radio-Frequency Inductive Sources
Dipeso G, Vahedi V, Hewett DW, Rognlien TD
Journal of Vacuum Science & Technology A, 12(4), 1387, 1994 |
