검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
The controlled growth of GaN microrods on Si(111) substrates by MOCVD Foltynski B, Garro N, Vallo M, Finken M, Giesen C, Kalisch H, Vescan A, Cantarero A, Heuken M Journal of Crystal Growth, 414, 200, 2015 |
| 2 |
Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT Vallo M, Lalinsky T, Dobrocka E, Vanko G, Vincze A, Ryger I Applied Surface Science, 267, 159, 2013 |
| 3 |
Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation Lalinsky T, Vallo M, Vanko G, Dobrocka E, Vincze A, Osvald J, Ryger I, Dzuba J Applied Surface Science, 283, 160, 2013 |