검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes Besnard G, Garros X, Andrieu F, Nguyen P, Van den Daele W, Reynaud P, Schwarzenbach W, Delprat D, Bourdelle KK, Reimbold G, Cristoloveanu S Solid-State Electronics, 113, 127, 2015 |
| 2 |
Reliability of ultra-thin buried oxides for multi-V-T FDSOI technology Besnard G, Garros X, Nguyen P, Andrieu F, Reynaud P, Van Den Daele W, Bourdelle KK, Schwarzenbach W, Toffoli A, Kies R, Delprat D, Reimbold G, Cristoloveanu S Solid-State Electronics, 97, 8, 2014 |
| 3 |
A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration Diab A, Fernandez C, Ohata A, Rodriguez N, Ionica I, Bae Y, Van den Daele W, Allibert F, Gamiz F, Ghibaudo G, Mazure C, Cristoloveanu S Solid-State Electronics, 90, 127, 2013 |
| 4 |
Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs Van Den Daele W, Le Royer C, Augendre E, Mitard J, Ghibaudo G, Cristoloveanu S Solid-State Electronics, 59(1), 25, 2011 |
| 5 |
Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction Van Den Daele W, Augendre E, Le Royer C, Damlencourt JF, Grandchamp B, Cristoloveanu S Solid-State Electronics, 54(2), 205, 2010 |