화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance
Brunco DP, De Jaeger B, Eneman G, Mitard J, Hellings G, Satta A, Terzieva V, Souriau L, Leys FE, Pourtois G, Houssa M, Winderickx G, Vrancken E, Sioncke S, Opsomer K, Nicholas G, Caymax M, Stesmans A, Van Steenbergen J, Mertens PW, Meuris M, Heyns MM
Journal of the Electrochemical Society, 155(7), H552, 2008
2 Germanium FETs and capacitors with rare earth CeO2/HfO2 gates
Dimoulas A, Panayiotatos Y, Sotiropoulos A, Tsipas P, Brunco DP, Nicholas G, Van Steenbergen J, Bellenger F, Houssa M, Caymax M, Meuris M
Solid-State Electronics, 51(11-12), 1508, 2007
3 Selective epitaxial growth of GaAs on Ge by MOCVD
Brammertz G, Mols Y, Degroote S, Leys M, Van Steenbergen J, Borghs G, Caymax M
Journal of Crystal Growth, 297(1), 204, 2006
4 Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates
Van Elshocht S, Caymax M, Conard T, De Gendt S, Hoflijk I, Houssa M, Leys F, Bonzom R, De Jaeger B, Van Steenbergen J, Vandervorst W, Heyns M, Meuris M
Thin Solid Films, 508(1-2), 1, 2006
5 Epitaxy solutions for Ge MOS technology
Leys FE, Bonzom R, Loo R, Richard O, De Jaeger B, Van Steenbergen J, Dessein K, Conard T, Rip J, Bender H, Vandervorst W, Meuris M, Caymax M
Thin Solid Films, 508(1-2), 292, 2006