검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Scaling of Si and GaAs Trench Etch Rates with Aspect Ratio, Feature Width, and Substrate-Temperature (Vol 13, Pg 92, 1995) Bailey AD, Vandesanden MC, Gregus JA, Gottscho RA Journal of Vacuum Science & Technology B, 15(2), 373, 1997 |
| 2 |
An Approximate Quantitative-Analysis of Nonequilibrium Plasma Transport for High-Density Plasmas Schram DC, Dehaas JC, Vandermullen JA, Vandesanden MC Plasma Chemistry and Plasma Processing, 16(1), 19, 1996 |
| 3 |
Scaling of Si and GaAs Trench Etch Rates with Aspect Ratio, Feature Width, and Substrate-Temperature Bailey AD, Vandesanden MC, Gregus JA, Gottscho RA Journal of Vacuum Science & Technology B, 13(1), 92, 1995 |
| 4 |
Deposition of Amorphous-Carbon Layers from C2H2 and CF4 with an Expanding Thermal Arc Plasma Beam Set-Up Gielen JW, Vandesanden MC, Schram DC Thin Solid Films, 271(1-2), 56, 1995 |