검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition Gencarelli F, Shimura Y, Kumar A, Vincent B, Moussa A, Vanhaeren D, Richard O, Bender H, Vandervorst W, Caymax M, Loo R, Heyns M Thin Solid Films, 590, 163, 2015 |
| 2 |
Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing Augendre E, Pawlak BJ, Kubicek S, Hoffmann T, Chiarella T, Kerner C, Severi S, Falepin A, Ramos J, De Keersgieter A, Eyben P, Vanhaeren D, Vandervorst W, Jurczak M, Absil P, Biesemans S Solid-State Electronics, 51(11-12), 1432, 2007 |
| 3 |
Active dopant characterization methodology for germanium Clarysse T, Eyben P, Janssens T, Hoflijk I, Vanhaeren D, Satta A, Meuris M, Vandervorst W, Bogdanowicz J, Raskin G Journal of Vacuum Science & Technology B, 24(1), 381, 2006 |
| 4 |
Heavy ion implantation in Ge: Dramatic radiation induced morphology in Ge Janssens T, Huyghebaert C, Vanhaeren D, Winderickx G, Satta A, Meuris M, Vandervorst W Journal of Vacuum Science & Technology B, 24(1), 510, 2006 |
| 5 |
Bulk properties of MOCVD-deposited HfO2 layers fair high k dielectric applications Van Elshocht S, Baklanov M, Brijs B, Carter R, Caymax M, Carbonell L, Claes M, Conard T, Cosnier V, Date L, De Gendt S, Kluth J, Pique D, Richard O, Vanhaeren D, Vereecke G, Witters T, Zhao C, Heyns M Journal of the Electrochemical Society, 151(10), F228, 2004 |
| 6 |
Impact of probe penetration on the electrical characterization of sub-50 nm profiles Clarysse T, Vanhaeren D, Vandervorst W Journal of Vacuum Science & Technology B, 20(1), 459, 2002 |