검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
0.25 mu m fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters Vanmackelberg M, Raynaud C, Faynot O, Pelloie JL, Tabone C, Grouillet A, Martin F, Dambrine G, Picheta L, Mackowiak E, Llinares P, Sevenhans J, Compagne E, Fletcher G, Flandre D, Dessard V, Vanhoenacker D, Raskin JP Solid-State Electronics, 46(3), 379, 2002 |
| 2 |
Fully depleted SOICMOS technology for heterogeneous micropower, high-temperature or RF microsystems Flandre D, Adriaensen S, Akheyar A, Crahay A, Demeus L, Delatte P, Dessard V, Iniguez B, Neve A, Katschmarskyj B, Loumaye P, Laconte J, Martinez I, Picun G, Rauly E, Renaux C, Spote D, Zitout M, Dehan M, Parvais B, Simon P, Vanhoenacker D, Raskin JP Solid-State Electronics, 45(4), 541, 2001 |
| 3 |
Comparison of TiSi2, CoSi2, and NiSi for Thin-Film Silicon-on-Insulator Applications Chen J, Colinge JP, Flandre D, Gillon R, Raskin JP, Vanhoenacker D Journal of the Electrochemical Society, 144(7), 2437, 1997 |